Abstract
Singly charged contaminant beams have been analyzed during P 2+ implants on an EXTRION 220 medium-current ion implanter. A method has been developed for measuring the amount of contamination prior to the actual implant. The measured amount of singly charged energy contamination in the doubly charged ion beam has been related to a shift in sheet resistance of the implanted layer. This shift is proportional to the amount of energy contamination. This measurement proves to be more sensitive than SIMS analysis for the implant that was monitored.
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