Energy capability of power devices with Cu layer integration

Abstract

Device level solutions are necessary for thermal management in smart power devices. For many automotive applications, the power pulses are too short for for packaging to affect the temperature. A thick copper layer is a potential solution because of its thermal properties. This paper reports for the first time experimental results on the energy capability of DMOS power devices with a thick copper layer integrated into a smart power technology. It was experimentally observed that a thick copper layer over the power device enhances energy capability significantly. The mechanics of the thick copper layer in increasing the energy capability is discussed.