Abstract
We report the growth mode evolution of homoepitaxially grown InP by metal organic vapour phase epitaxy examined by ex-situ atomic force microscope (AFM). We varied the growth temperature between 500°C and 630°C and used substrates with different miscut angle from 0.15° to 2° off towards (111)A. After annealing under phosphine above 500°C, the wafer surface recovers its terrace structure with nominal width terraces. At growth temperatures of 580–600°C, the step flow is dominantly observed. At higher temperatures of 630°C, the step flow growth evolves towards step bunching when increasing the miscut angle from 0.2° to 2° off and the terrace width saturates at ≈40 nm. The effect of the growth temperature is analysed taking account for the different surface energy barrier for the transition step flow/step bunching. A clear evidence of the dependence of the activation energy with miscut angle will be shown. The Schwoebel's barrier evolution is shown from the growth onto differently misoriented substrates.
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