Abstract
AbstractThe net generation balance equation is incorporated into the Poisson equation and the continuty equation to deduce the IB quasi‐Fermi EfIB and filling factor f. The QD state density is not enough high to pin the IB quasi‐Fermi level EfIB at the position of the IB level EIB so that EfIB depends on the QD position and the operation voltage. In the case of the quasi‐uniform absorption (the weak absorption and the same absorption coefficient constants of sub‐bandgap photons), a rough approximation is that EfIB approximately parallels to EIB, and clamps in some equilibrium position. In addition, in the case of the nonuniform absorption, the proper ratio αIC0/αVI0 can effectively enhance the conversion efficiency. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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