Abstract
AbstractThe effect of internal elastic stress on energy band‐gap shift in the A3B5 heteroepitaxial layers was investigated. The possibilities to get higher accuracy of divergent beam X‐ray stress determination method, designed in the scanning electron microscope (SEM), was presented. X‐ray topography method in the SEM with X‐ray magnification from 2 up to 10 was for the first time described.The epilayer photoluminescence (PL) peak energy shift as a function of internal elastic stress was measured on the GaInP/GaAs, GAInAsP/InP heterostructures and the influence of different factors on the accuracy of the results was discussed.
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