Abstract
Flexible electronics based on the otherwise rigid conventional crystalline semiconductors is emerging as a new class of technology. However, the existing layer‐transfer approaches for implementing such technologies is mostly focused on maintaining the performance of the original device. Here we show that layer transfer through substrate cracking with a pre‐tensioned nickel film readily enables the manipulation of the electronic band structure in flexible gallium arsenide (GaAs) devices. We empirically and theoretically quantify the effect of ‘engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence and quantum efficiency measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. The experimental results are in good agreement with our theoretical calculations. This study introduces a new way for strain engineering in flexible compound semiconductors with important implications for electronic and optoelectronic applications. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
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