Abstract
Interfacial reaction and the energy-band alignments of HfO2 films on p-GaAs substrate were investigated by using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been demonstrated that the alloying of HfO2 with Al2O3 (HfAlO) can significantly reduce native oxides formation and increases the valence-band offsets (VBOs) at HfO2∕p-GaAs interface. In addition, the effects of Si interfacial passivation layer on band alignments have also been studied. VBO at HfO2∕p-GaAs, HfAlO∕p-GaAs, and HfO2∕Si∕p-GaAs interfaces were 2.85, 2.98, and 3.07eV, respectively.
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