Abstract
This paper describes an experimental investigation of the energy and spatial response of silicon strip detectors used for X-ray measurements. The measurements of single strip amplitude distributions have been performed for a p +–n silicon strip detector irradiated with X-rays for different detector bias voltages and for two measurements geometries (with the detector irradiated from either the strip side or from the ohmic contact side). The measured amplitude distributions have been compared with those obtained from simulations using the developed simulation package. The spatial response of the detector has been measured by scanning an edge across the strips and measuring the corresponding strip count rate. The measured spatial response has been compared with that obtained from simulations.
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