Abstract
The experimental results of hot electron energy and momentum relaxation rates in GaAs/AlxGa1-xAs multiple quantum wells, grown by molecular beam epitaxy (MBE) are presented. The energy relaxation rates are measured at lattice temperatures of T=4.2 K and T=77 K and up to a maximum electron temperature of Te=270 K. The results are compared with a theoretical model involving non-equilibrium interface phonon production. The experimental energy relaxation time of tau eff approximately=0.55 ps is shown to be in disagreement with the calculations. This discrepancy is attributed to the uncertainty in the hot phonon lifetime. The authors also present the results of high field, parallel transport, drift velocity measurements. The results indicate a drift velocity saturation at Vd=7*106 cm s-1 at 300 K and Vd=1.5*107 cm s-1 at 77 K. The saturation is followed by current instabilities.
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