Abstract

As they hold extraordinary mechanical and physical properties, two-dimensional (2D) atomic layer materials, including graphene, transition metal dichalcogenides, and MXenes, have attracted a great deal of attention. The characterization of energy and charge transport in these materials is particularly crucial for their applications. As noncontact methods, Raman-based techniques are widely used in exploring the energy and charge transport in 2D materials. In this review, we explain the principle of Raman-based thermometry in detail. We critically review different Raman-based techniques, which include steady state Raman, time-domain differential Raman, frequency-resolved Raman, and energy transport state-resolved Raman techniques constructed in the frequency domain, space domain, and time domain. Detailed outlooks are provided about Raman-based energy and charge transport in 2D materials and issues that need special attention.

Highlights

  • Owing to their extraordinary electrical, optical, and mechanical properties, two-dimensional (2D) materials, for instance, graphene, black phosphorus, hexagonal boron nitride, transition metal dichalcogenides (TMDs), and MXenes, can be used in many different areas, for instance, optoelectronic devices, biosensing, energy storage, etc. [1,2,3,4,5,6,7]

  • The thermal transport, interface thermal transport, electronic structures, physical structures, and hot carrier transport properties of these 2D materials are of great importance in fundamental research, as well as in engineering applications [8]

  • Over the last few years, many simulation-based methods have been reported to characterize the thermal transport in 2D materials, such as molecular dynamics simulation, non-equilibrium Green function method, the Boltzmann transport equation, and the first-principles-based multi-temperature model [10,11,12,13]

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Summary

Introduction

Owing to their extraordinary electrical, optical, and mechanical properties, two-dimensional (2D) materials, for instance, graphene, black phosphorus, hexagonal boron nitride, transition metal dichalcogenides (TMDs), and MXenes, can be used in many different areas, for instance, optoelectronic devices, biosensing, energy storage, etc. [1,2,3,4,5,6,7]. Over the last few years, many simulation-based methods have been reported to characterize the thermal transport in 2D materials, such as molecular dynamics simulation, non-equilibrium Green function method, the Boltzmann transport equation, and the first-principles-based multi-temperature model [10,11,12,13]. Many experimental methods, such as time-domain thermoreflectance (TDTR), the microbridge method, the 3ω method, the laser flash technique, and Raman spectroscopy, are employed to explore the thermal properties of 2D materials [14,15,16,17]. Potential research perspectives in the field of 2D materials using these Raman-based techniques are discussed

Steady State Raman
Time-Domain Differential and Frequency-Resolved Raman
Probing of Conjugated Hot Carrier Transport
Probing of Thermal Nonequilibrium among Phonon Branches
Concluding Remarks and Outlooks
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