Abstract
We studied InGaAs quantum dots (QD) formation, the evolutions of QD density, and relaxation as function of indium content and layer thickness on GaAs(001). The results as well as literature show that deposition of InAs after QD formation increases linearly the QD density. This indicates a single constant energy is released per QD. The strain energy at the onset of QD formation and relaxation is constant, i.e., independent of the indium content. Thus relaxation and QD formation can be described better by using a constant critical strain energy of 4.0 eV/nm2 compared to theories based on balancing the energy/force of dislocations with the strain. QD were only found above 40–50% of indium, while for lower indium contents a dislocation network forms. The reason is a surface transition from c(4×4) to (2×4)-like which promotes nucleation and hence QD formation.
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