Abstract

The current understanding on the energetics (wetting, adhesion and chemical bonding) of metal/ceramic interfaces, and on the metalsemiconductor Schottky contacts is reviewed with special emphasis on the fundamental aspects of interfaces. Following these representations and discussions, the relationship between adhesion energies and Schottky barrier heights of various metal/semiconductor or metal/insulator interfaces is then deduced and discussed. The main conclusion that can be achieved by such a relationship might be that the current knowledge and very vast literature existing in the field of Schottky contacts could be used to enhance our understanding of the fundamental aspects associated with metal/ceramic interfaces, or vice versa.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call