Energetics and vibrational frequencies of interstitial H 2 molecules in semiconductors

Abstract

We report a comprehensive investigation of the incorporation of H 2 molecules in semiconductors. We consider five different materials (Si, GaAs, InAs, GaP and GaN), and use a density-functional-pseudopotential approach. Combined with calculations for H 2 in vacuum, these results enable us to examine trends and develop an understanding of the physics of incorporation of a strongly bound molecule in a semiconducting environment. We find that the vibrational frequency of the interstitial molecules is shifted down significantly compared to the free molecule. We also investigate anharmonicity in the molecular vibrations. The results confirm a recent assignment of Raman lines to interstitial H 2 in GaAs, but contradict an assignment claiming that the frequency for H 2 in Si is close to the free-molecule value. Finally, we calculate and discuss diffusion of H 2 molecules through a Si crystal.