Abstract
Energetic particles bombarding the substrate placed in front of the target was observed by time-of-flight method for the film preparation of ZnO by RF planar magnetron sputtering and RF diode sputtering. It was confirmed that energetic oxygen atoms are bombarding the substrate. At the same time, fairly amount of energetic oxygen molecules were also observed. The total energies of the energetic oxygen atoms and molecules were extimated from the analysis of the time-of-flight spectra, and the estimated total energies for RF sputtering were compared with those for DC sputtering. It has been confirmed that the influence of the energetic oxygen atoms and molecules in Rf sputtering on ZnO films is the same order as that of DC sputtering.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
