Abstract
The understanding of the retention and endurance degradation behavior of different levels of filamentary analog RRAM is critical for the development of the neuromorphic computing. This paper investigates the conductance distribution of different levels during retention and endurance tests. The low conductance states and high conductance states change from the normal distribution at the beginning to asymmetric skewed distribution with baking time increasing. But intermediate states remain the normal distribution. A model is proposed to predict the conductance evolution of different levels. It is also found that endurance lifetime depends on the ratio and position of endurance window. The longer endurance lifetime is attributed to switching in a smaller high-C window. Physical mechanism of endurance degradation is discussed.
Highlights
Recent advance in brain-inspired neuromorphic computing has been demonstrated plenty of complex tasks based on resistive random access memory (RRAM) [1]–[3]
It should be known that the reliability requirements of analog RRAM are quite different from binary RRAM, which make it impossible to follow the previous experience and results
RETENTION After programming the RRAM array using the BCMS, eight conductance levels with over 100 cells are baked at three kinds of temperatures to investigate the retention behavior
Summary
Recent advance in brain-inspired neuromorphic computing has been demonstrated plenty of complex tasks based on resistive random access memory (RRAM) [1]–[3]. Retention and endurance are crucial metrics for evaluating reliability both for data storage as memory application and computing in neuromorphic system. Retention in analog memory for computing application concerns the conductance change of each device. To investigate the reliability requirements for neuromorphic computing, the innovative methods should be developed to characterize the degradation behavior of retention and endurance of analog RRAM. Moon et al [5] reported an optimization on device material to implement bidirectional analog non-filamentary RRAM based on Al/Mo/PCMO stack. It showed improvements both in retention of LCS. The retention and endurance degradation behaviors of filamentary analog RRAM are investigated.
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