Abstract
By the analysis of difficulties in VDSM poly gate etching process, firstly, this paper discussed traditional endpoint detection techniques of optical emission spectroscopy (OES) and interferometer endpoint detection (IEP) in detail, then, constructing our innovated endpoint detection system, and based on the complicated signal processing of optical and electrical signal from VDSM poly gate etching process, the endpoint is pre-found precisely. As the experiment of endpoint detection is carried out on sub-90 patterned poly gate substrates, very important guidance to the endpoint detection of sub-90 nm VDSM poly gate etching process may be expected.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
