Abstract
We investigated relationships between the electro-optic properties and the growth conditions for 2-methyl-4-nitroaniline (MNA) thin-film crystals. The crystal is grown by melt growth between two quartz substrates with a newly developed automatic control of the crystal growth, which utilizes an endothermic reaction. The electro-optic effect decreases with increases in the maximum melt temperature. When MNA thin-film crystals are grown from the melt at temperatures near the melting point, the figure of merit for electro-optic phase retardation is the greatest. The value is twice that of the LiNbO3 crystal. By annealing, the figure of merit becomes three times as large as that of the LiNbO3 crystal. This is consistent with the expectations from second-harmonic generation measurements. We also investigated the purity dependence of the electro-optic effect. The electro-optic effect drastically decreases with impurity, especially for purities <99.9%.
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