Abstract

Controlling graphene's doping will be critically important for its incorporation into future electronic and optoelectronic devices. Noncovalent functionalization through adsorption of organic molecules on graphene's surface has proved to be a promising route for achieving p- or n-type doping. However, due to the poor adhesion of the molecules, these tend to desorb over time under standard environmental conditions or in the presence of certain solvents. The resulting reversal in the achieved chemical doping is a major obstacle to using organic molecules as noncovalent graphene dopants. In this work, we present a simple method for achieving long-term p- and n-doping of graphene devices through vapor phase evaporation of organic molecules, followed by encapsulation under an inert Al2O3 film. This film, grown via an optimized atomic layer deposition process, ensures long-term doping stability, as confirmed by electrical transport and Raman spectroscopy measurements. The doping is maintained even after storing the devices for six weeks in ambient conditions and immersing them in a dopant removing solvent, demonstrating that the film is as an effective barrier against environmental degradation of the doped devices.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.