Abstract
Polycrystalline Cu2O thin films are prepared on c‐sapphire substrates and n‐type templates by radio frequency sputtering at a temperature of 650 K employing a metallic target, an argon/oxygen gas mixture as well as a biased semi transparent electrode placed between the target and the substrate. Introducing that grid, we demonstrate the possibility to tune the cuprous oxide thin film properties, especially the morphology, by controlling the electron temperature in the plasma as well as the beneficial effect of a suspected reduction of interface state densities at photovoltaic heterostructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
