Enabling Terabit Systems through MOVPE

Abstract

Low pressure metal-organic vapor phase epitaxy (MOVPE) is the dominant technology for the fabrication of transmitters and detectors for the fiber optic communication industry. These high bandwidth devices typically utilize heterostructure designs incorporating strained multiple quantum well active regions. The epitaxial growth of such structures incorporates a complicated sequence of growth and regrowth steps over planar and non-planar surfaces. Abrupt interfaces, precise thickness and composition control, and uniformity are essential for high yield, high throughput manufacturing. More advanced devices integrate modulator or waveguide structures monolithically on the transmitter chip through extensive bandgap engineering. This can be accomplished by taking advantage of localized growth modifications occurring during selective area growth (SAG). Furthermore, advances in the purity levels of both the metal-organic and gas sources have enabled MOVPE grown materials to meet the low doping and high mobility levels required for detector structures. MOVPE offers a robust, high throughput, and flexible platform to meet the ever increasing demands for optoelectronic component manufacturing.