Abstract
This paper reviews recent progress in SiGe HBT compact model development and SiGe profile optimization aimed specifically at extreme environment electronics applications. Wide temperature range compact modeling has been achieved by more physically accounting for effects like carrier freeze out and Mott transition, as well as including higher order temperature dependences of critical model parameters. New insight into the physics of fT roll-off in SiGe HBTs is offered, and used to optimize SiGe profile for improved high injection performance. Single event upset (SEU) in SiGe HBT logic circuits is shown to improve with cooling.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
