Abstract
The synapses are essential to the brain neuromorphic system, and especially the plasticity of synapse contributes significantly in cognitive functions. Ferroelectric tunnel junction (FTJ) can be utilized to emulate the synaptic functions by the effective control of resistance state, which is related with the ferroelectric polarization state of barrier layer. Here, we study the emulation of a synaptic response in the fabricated organic ferroelectric tunnel junctions (OFTJs) with Polyvinylidene fluoride (PVDF) polymer barriers. The functions of long-term potentiation and long-term depression are demonstrated by exploring the relationship between resistance and polarizing pulse. In addition, our device can be also utilized to realize multi-memory function, a device with six-resistance states is demonstrated. Our results may provide a new degree of freedom for the realization of synaptic functions in OFTJs.
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