Abstract
A new doping approach of preparing VO2 film was proposed to significantly tune the transition phase temperature. The heavy Ni-Cr-codoped VO2 film ultra-thin layer was deposited on the pure VO2 film by reactive pulsed magnetron sputtering on the Si substrate followed with annealing. The microstructure, optical and phase transition performance of VO2 films were characterized via X-ray diffraction, UV/VIS/NIR spectrophotometer and thin film phase transition measurement system, respectively. The result indicates that the transition phase temperature of VO2 film can be reduced from 53 ℃ to 30 ℃ by easily controlling different doping time.
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