Abstract
The electron mobility in silicon has been obtained by the Monte Carlo simulation technique for different applied electric fields and under various physical conditions, such as temperature, impurity concentration, etc. The mobility values have then been expressed empirically by simple power law relationships. It is observed that the mobility values calculated by using these simple power law relations yield values that show agreement within 5 with those obtained from the detailed Monte Carlo simulation technique. It is concluded that these empirical relations can be used very effectively in a device modelling program.
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