Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors

Abstract

In this letter, the cross section of damage formation per individual ion is measured for III-V compound semiconductors ion implanted at 15 K, applying Rutherford backscattering spectrometry. An empirical model is proposed that explains the measured cross sections in terms of quantities representing the primary energies deposited in the displacement of lattice atoms and in electronic interactions. The resulting formula allows the prediction of damage formation for low temperatures and low ion fluences in these materials and can be taken as a starting point for further quantitative modeling of damage formation including secondary effects such as temperature and ion flux.