Abstract
In this letter, the cross section of damage formation per individual ion is measured for III-V compound semiconductors ion implanted at 15 K, applying Rutherford backscattering spectrometry. An empirical model is proposed that explains the measured cross sections in terms of quantities representing the primary energies deposited in the displacement of lattice atoms and in electronic interactions. The resulting formula allows the prediction of damage formation for low temperatures and low ion fluences in these materials and can be taken as a starting point for further quantitative modeling of damage formation including secondary effects such as temperature and ion flux.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.