Abstract
The depth distribution of low energy boron implants in silicon are analyzed using secondary ion mass spectroscopy. The profiles for equivalent energy implants of B+ (10–30 keV) and (50–120 keV) are compared. Fluorine trapping in implants is also investigated. New range parameters are extracted from the measured profiles using a least squares fitting technique. The Pearson IV distribution provides an excellent representation of the doping profile in B+ implants, while for implants the profiles are better represented using a gaussian distribution with an attached exponential tail.
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