Abstract
This paper presents a study on the performance of a bottom gate ZnO thin film transistor (TFT) model through 2-D TCAD device simulations and proposes a surface potential analytical model for the same. The simulation has been calibrated with a fabricated ZnO TFT. The analytical model is found to be in good agreement with the simulated measurements. Through further analyses on TCAD tool, the electrical characteristics of ZnO TFT have been investigated to comprehensively deduce the effect of ZnO active layer thickness, the dielectric material and the drain voltage. To obtain a significant ratio of on and off currents, and a positive gate voltage switching, gate workfunction engineering has been demonstrated.
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