E-mode RF transistors and circuit model using CVD MoS<inf>2</inf>

Abstract

Molybdenum disulfide (MoS 2 ), a member of the transition metal dichalcogenide (TMD) family, is a 2D semiconductor with a direct bandgap of ∼1.8 eV for single layers. Its bandgap allows for high I on /I off metal-oxide semiconducting field-effect transistors (FETs). More relevant for radio frequency (RF) wireless applications, theoretical studies predict MoS 2 to have saturation velocities, V sat > 3×106 cm/s. Recent studies have increased exfoliated MoS 2 cutoff frequencies by employing a combination of scaling and geometry modification.1 However, for industrial scale applications, the mechanical cleavage process is not scalable and, thus far, there have been few studies on chemical vapor deposited (CVD) MoS 2 RF FETs.2,3 Here we take an embedded gate approach4 to yield record transconductance, cutoff frequencies, and current saturation in CVD MoS 2 . Using measured S-parameters and the MIT-MVS semi-empirical verilog-A model4 we demonstrate analog and mixed-signal circuit operation.