Abstract
We have developed the technique of growing amorphousa-SiOx(Er) filmsand a-SiOx(Er)/a-Si:H multilayer structures based on spatially separating the processes of the decompositionof an oxygen–silane gas mixture in an rf glow discharge plasma and remote magnetronsputtering of an Er target. This approach allows us to control independently the filmdeposition rate, the Er-ion concentration and its depth distribution in the film. Time-resolvedphotoluminescence measurements have shown that films and planar microcavities with anEr-doped active layer exhibit internal quantum efficiency for Er ion emission of∼75%. The method that we suggest is a way of producing effectively emitting microcavitystructures, in which the distribution profile of emission centers coincides with that of theelectromagnetic field in individual layers of the structure.
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