Abstract
The phosphorus concentration in the n ++ layer (top layer of a phosphorus emitter) was lowered by either thinning or thickening the phosphosilicate glass (PSG) film as the dopant source. Reducing the concentration by thickening the PSG combined with oxidation led to the improvement of the solar cell performance. Thinning the PSG by lowering the process temperature hardly showed positive effect. Reducing the sheet resistance from 66 ohm/square to 51-56 ohm/square by deepening the emitter depth itself and lowering the phosphorus concentration in the n ++ layer resulted in a maximum efficiency gain of 0.3%abs for a uniform emitter structure. A selective emitter was fabricated through a process flow including two separate POCl3 diffusion steps. Significant increase of Voc by 18 mV was obtained resulting in an average efficiency gain of 0.5%abs and the largest of 0.7%abs for the best cell. Our 2 × POCl3 selective emitter process for multicrystalline silicon demonstrated the highest gain in efficiency and Voc, compared with to previously reported selective emitter approaches.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
