Abstract
ABSTRACTThe directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.
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