Emissive properties of SiO2 thin films through photonic windows

Abstract

In this work, we study the selective emission properties of silicon-based three-dimensional photonic crystals coated with thin films of silicon dioxide presenting temperature emission measurements at 600 K of oxidized macroporous silicon structures. The photonic band gap of the structure is centered at 9 μm with 2.5 μm bandwidth. Through this photonic window defined by the gap, a narrow emission peak arises from the oxide layer. We propose the given structure as a selective thermal source for infrared spectroscopy applications in the fingerprint spectral region (6–12 μm wavelength).