Abstract
We have studied emission-wavelength extension of nitrided InAs/GaAs quantum dots (QDs) with different sizes. Nitrided QDs have been shown to suppress In segregation during the capping layer growth. The emission wavelength reaches 1.3 μm at room temperature. Effects of the strain on the structural and optical properties of QDs have been investigated by photoluminescence spectroscopy and transmission electron microscopy. The nitrogen-incorporation process into the InAs QDs depends on the QD size at the moment of nitrogen irradiation. The large QDs are covered by a thin nitrided layer, while the small QDs tend to form nitrogen-containing alloys.
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