Abstract
Emission spectrum and intensity of picosecond intraband luminescence for single parabolic band approximation of electron conduction band in insulating crystals are calculated. It is shown that the spectral intensity of this intraband emission increases approximately as (ħω)−1/2 with decrease in photon energy, while the spectral density of photons increases as (ħω)−3/2. The intensity of this emission is inversely proportional to the longitudinal optical phonon frequency. The total emission yield in this approximation is low, less than 10 photons in the spectral window of silicon photomultipliers per MeV of ionizing particle energy.
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