Abstract
Titanium dioxide light emitting diode was successfully designed and characterised. An approach in developing TiO 2 was based on cylindrically symmetric configuration with shorter computation time. The main goal of the research was to look into the performance of light emitting diode by using titanium dioxide and compare its validity with the standard or common criteria. The circular chip of titanium dioxide with 60 μm diameters was made with a circular active region formed by p and ntype dopants. The drastic reduction of internal quantum efficiency droops almost to zero value even though the current started to increase by 0.002 mA. The efficient operation within the device was observed that it would occur at the lowest current 0.01 mA while the total emission rate shown linearly increased at axis (0.002 mA, 5.6 (1/s)). This light emitting diode based on titanium dioxide also enabled to operate at lower turn-on voltage as low as 0.5 V. As the increment of voltages, the distribution of emission rate became less concentrated towards the top active of p-type layer of the device. The result also compared the two meshes where it was found that the refined mesh was focused around the p-n junction.
Highlights
Light emitting diode (LED) is one of solid state lighting device that emits photons when the electrons and holes are recombining as electric current flow through it [1]
Various semiconductor materials that are widely used in preparing LED such as Zinc Oxide (ZnO), Gallium Nitrites (GaN), Zinc Selenide (ZnSe), and Gallium Asenide (GaAs)
The internal quantum efficiency (IQE) versus current was plotted in order to measure the efficiency of the radiative recombination of the LED device
Summary
Light emitting diode (LED) is one of solid state lighting device that emits photons when the electrons and holes are recombining as electric current flow through it [1]. The fluorescent light bulbs are currently used in daily application. Due to problem of fluorescent light bulbs in electrical power consumption, lifetime and reliability have attracted researchers to develop light emitting diode technology as primary lighting source in future. Various semiconductor materials that are widely used in preparing LED such as Zinc Oxide (ZnO), Gallium Nitrites (GaN), Zinc Selenide (ZnSe), and Gallium Asenide (GaAs). By using these materials, the electrical energy of LED can be converted into lighting energy as the current conducting across the p-n junction. ZnSe-based white LED was homoepatixally prepared by using ZnSe substrates via molecular beam epitaxy that was reported in [2]. The greenish-blue emission at origin 483 nm from epitaxial layer was observed and is found that the emission wavelength of the LED and the measured chromaticity coordinate were almost independent of the injected current
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