Abstract
The electron emission rate dependence on the electric field for two levels in proton bombarded $n$-type GaAs, E1 and E2, was measured at different temperatures. E1 shows an emission enhancement completely described by the phonon-assisted tunneling model. The behavior observed for E2 is described by the sum of a Poole-Frenkel part and a phonon-assisted tunneling contribution. These data support a $+/0/\ensuremath{-}$ charge state model for ${V}_{\text{As}}$ in GaAs, and the potential contribution of this defect to the implant isolation process is discussed.
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