Abstract
Emission of terahertz radiation from strained Be-doped GaAsN layers has been revealed at 4.2 K in postbreakdown electric fields. Heavy and light hole subbands are split in strained layers, and, along with localized acceptor states, resonant states arise. The spectrum of terahertz radiation has been obtained, the current-voltage characteristics of the samples were investigated, and the energy spectra of acceptors were calculated. Peaks in the spontaneous emission spectrum correlate well with the results of the energy spectrum calculations. The transitions between the resonant and localized states of the acceptors make the main contribution to the terahertz radiation intensity.
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