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Abstract
AbstractPhotoluminescence (PL) enhancement due to the screening of piezoelectric field induced by Si-doping is systematically studied in GaN/AlGaN quantum wells (QWs) fabricated by metal organic vapor-phase-epitaxy (MOVPE). The PL enhancement ratio of QWs for Si-doped directly into the wells was much larger than that for doped only into the barrier layers. This result shows that the crystal quality of the quantum well is not so damaged by heavy Si-doping, which is different from the cases of GaAs or InP material systems. The PL intensity enhancement ratio was especially large for thick wells. The typical value of the enhancement ratio was 30 times for a 5 nm-thick single QW. The optimum Si-doping concentration was approximately 4×1018 cm-3. From the well width dependence of the PL enhancement ratio and PL peak shift under high excitation conditions, we determined that the dominant effect inducing the PL enhancement is screening of piezoelectric field in the QWs. These results indicate that Si-doping is very effective for the application of GaN/AlGaN QWs to optical devices.
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