Abstract

We report the modulation of emission energy, exciton dynamics and lasing properties in a single buckled CdS nanoribbon (NR) by strain-engineering. Inspired by ordered structure fabrication on elastomeric polymer, we develop a new method to fabricate uniform buckled NRs supported on polydimethylsiloxane (PDMS). Wavy structure, of which compressive and tensile strain periodically varied along the CdS NR, leads to a position-dependent emission energy shift as large as 14 nm in photoluminescence (PL) mapping. Both micro-PL and micro-reflectance reveal the spectral characteristics of broad emission of buckled NR, which can be understood by the discrepancy of strain-induced energy shift of A- and B-exciton of CdS. Furthermore, the dynamics of excitons under tensile strain are also investigated; we find that the B-exciton have much shorter lifetime than that of redshifted A-exciton. In addition, we also present the lasing of buckled CdS NRs, in which the strain-dominated mode selection in multi-mode laser and negligible mode shifts in single-mode laser are clearly observed. Our results show that the strained NRs may serve as new functional optical elements for flexible light emitter or on-chip all-optical devices.

Highlights

  • We report the modulation of emission energy, exciton dynamics and lasing properties in a single buckled CdS nanoribbon (NR) by strain-engineering

  • The dynamics of excitons under tensile strain are investigated; we find that the B-exciton have much shorter lifetime than that of redshifted A-exciton

  • To fabricate out-of-plane buckled CdS NRs, shown in Fig. 1(d), a prestrained PDMS substrate was prepared by a custom-built strain stage

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Summary

Introduction

We report the modulation of emission energy, exciton dynamics and lasing properties in a single buckled CdS nanoribbon (NR) by strain-engineering. Of which compressive and tensile strain periodically varied along the CdS NR, leads to a position-dependent emission energy shift as large as 14 nm in photoluminescence (PL) mapping.

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