Emission energies of Si-DX centers in various AlGaAs microstructures

Abstract

In this paper, we report on thermostimulated electron emission experiments from resonant DX levels in bulk GaAlAs materials and in δ-doped GaAlAs/GaInAs/GaAs pseudomorphic heterostructures. To this end, the carriers were frozen out at low temperature on the DX levels by using the high pressure freeze out technique (HPFO). The metastable temperature T DX i is a characteristic of each DX i configuration. We observe that for a given DX i level, the emission energies are independent of the Al content, of the Fermi level position and of the pressure value, whatever the structure.