Abstract
An emission–diffusion theory that describes MOSFETs from the ballistic to diffusive limits is developed. The approach extends the Crowell–Sze treatment of metal–semiconductor junctions to MOSFETs and is equivalent to the scattering/transmission model of the MOSFET. This paper demonstrates that the results of the transmission model can be obtained from a traditional, drift–diffusion analysis when the boundary conditions are properly specified, which suggests that the traditional drift–diffusion MOSFET models can also be extended to comprehend ballistic limits.
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