Abstract
Current–voltage (I–V) characteristics, current stability, and capacitance–voltage (C–V) characteristics of p-type Si gated field emitter arrays (FEAs) have been measured. Emitter tips were made on a p-type Si substrate with a resistivity of 100 Ω cm. From experimental results, emission current saturation was found to occur beyond ∼2 μA and an inversion layer was found to be present under the gate. The emission current was also found to be much more stable than n-type Si FEAs. A model to explain the present I–V characteristics was derived, based on current limitation by thermal carrier generation in depletion layers under both the tips and the gate. In this model, the inversion layer acts as an n-channel gathering the thermally-generated electrons under the gate and supplies them to the tips. A concept for a new FEA capable of actively controlling the emission current is proposed.
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