Emission current influence of gated structure and diamond emitter morphologies in triode-type field emission arrays

Abstract

Field emission display is evolving as a promising technique for the future generation of flat panel displays. Characteristics affecting the power of field emitter arrays include the shape and work function of emission materials, distance between tip and gate, and the environmental vacuum condition. In this work, we present a novel scheme that involves a new fabrication process of gate structure metal–insulator–semiconductor (MIS) diode using IC technology. Deposition of the diamond film in this MIS diode forms a column-like diamond with gated field emission arrays (FEAs). This process is completed using a bias-assisted microwave plasma chemical vapor deposition system. Our results indicate that the threshold voltage of column-like diamond FEAs is about 10 V, and the field emission current density is about 139 mA cm −2 (at V gc =20 V). The diamond field emitter array devices with the new gate structure and tip morphology significantly influence the electron field emission characteristics.