Abstract
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
Highlights
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices
Rapid thermal annealing (RTA) is an effective way to enhance the optical properties of semiconductor materials through improving the composition homogeneity and decreasing the non-radiative defects concentration, which are introduced by asymmetry fluctuation of alloy components and intrinsic defects[8,9,10,11,12]
The effect of rapid thermal annealing on strained G aAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells (MQWs) is analyzed in detail
Summary
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. The emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The strain has great advantage of low threshold current density and high emission efficiency for MQWs laser[7] It plays an important role in adjusting the optical characteristics of semiconductor laser. Revealing the relationship of optical properties and strain is great significance for application of GaAsSb-based strained MQWs. Generally speaking, rapid thermal annealing (RTA) is an effective way to enhance the optical properties of semiconductor materials through improving the composition homogeneity and decreasing the non-radiative defects concentration, which are introduced by asymmetry fluctuation of alloy components and intrinsic defects[8,9,10,11,12]. The LH emission peak and HH emission peak have significant blue shift This phenomenon can be explained in terms of the increasing of strain or interfacial diffusion. Our studies were of great significance for adjustment of optical properties in GaAsSb/ AlGaAs strained MQWs
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