Abstract
In this work, we have studied a molybdenum oxide (MoO3) layer as an effective capping layer (CL) for TOLEDs. We varied the thickness of the capping layer in order to investigate its effects on the device performance. Both the top and bottom emission of the devices were found to be easily controlled by changing the thickness of MoO3 layer. Especially, at the CL thickness of 40 nm, the current efficiency shows 2.2 times enhancement compared to reference device which has no capping layer and exhibited the highest transmittance value. The results also revealed that the transmittance and light outcoupling efficiency are significantly dependent on the capping layer thickness and exhibit identical trend in change. In addition, the changes in the emission characteristics were optically simulated which agreed well with the experimental data.
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