Abstract
We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer positioned below an Al0.07Ga0.93N bottom cladding. Such devices are compared to standard InGaN based lasers looking at threshold current density, electrical characteristics, and far-field emission. Threshold current densities of 4 kA/cm2 and slope efficiencies of ∼0.6 W/A (for uncoated facets) have been achieved in AlInN containing devices. Lower mode leakage in the substrate is highlighted by a better transversal far-field pattern resulting in an improved beam quality.
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