Abstract
The influence of some parameters of nitrogen-containing heterostructures InAs/GaAsN/InGaAsN with strain-compensated superlattices (SCSL) on their emission characteristics has been studied. It is established that the net strain in the structure affects the photoluminescence (PL) linewidth, internal quantum efficiency, intensity, and wavelength. The maximum PL intensity and minimum full width at half maximum (FWHM) of the PL line were achieved with small strains (0–0.2%), whereas the maximum wavelengths (∼1.76 μm) observed for large strain (about +1%). By adding multilayer InAs inserts in the active InGaAsN quantum well in combination with using strain-compensated GaAsN/InGaAsN superlattices, it is possible to control the room-temperature emission wavelength in the range of 1.45–1.76 μm without significantly deteriorating the emissiion characteristics.
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