Abstract
Emission and reflection spectra from AlGaN/GaN single heterostructures grown on SiC substrates were investigated. Two-dimensional electron gas (2DEG) transitions were observed in both emission and reflection. The transitions are sharp, associated with the excited state of the 2DEG, reflect the conservation of the K-selection rule, and are excitonlike. The transitions are also associated with both the A- and B-valence bands. To verify the origin of the reflection and emission spectra, the top AlGaN layer was removed by reactive ion etching. After etching, only the excitonic reflection and emission spectra associated with GaN were observed.
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