Abstract
Silicon diodes irradiated with 1 MeV neutrons show relaxation behaviour, which results from deep levels that cause the material to become semi-insulating. The signature of these levels has been determined using the powerful technique of deep level transient spectroscopy. In particular, two deep levels are found not to anneal out with increases in fluence. It is possible to relate the activity of one of the levels to the relaxation behaviour of the diodes. The suggestion is that the relaxation behaviour of radiation-damaged silicon diodes is a consequence of the activity of those radiation-induced deep levels that are situated to act as generation–recombination centres.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
