Abstract
Power electronics engineers seek to optimize the performance of their circuits and systems to maximize efficiency, reduce size and cost, and perfect power quality. To support this, the developers of power electronics components have driven the performance of the underlying silicon-based switches and diodes to reduce on-state and switching losses, increase frequency of operation, and expand the integration of control electronics. However, some silicon power electronics components are facing fundamental limits in performance that may not support future system requirements. This paper describes the emergence of a new class of power electronics components based on the wide bandgap semiconductor silicon carbide (SiC) that will extend the design space for future power electronic engineers
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